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| BSR 17A NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BSR 17A 40 V 60 V 6V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 6 V IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IEB0 VCEsat VCEsat - - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 50 nA 5 :A 30 nA 200 mV 200 mV Collector saturation volt. - Kollektor-Sattigungsspg. 1) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 10 Switching Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 100 mA Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz VCB = 5 V, IE = ie = 0, f = 1 MHz VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 100 :A, RS = 1 kS, f = 10 Hz...15.7 kHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung ICon = 10 mA IBon = 1 mA - IBoff = 1 mA ton td tr toff ts tf - - - - - - RthA BSR 18A BSR 17A = U92 - - - - - - F - - fT CCB0 CEB0 300 MHz - - - 4 pF 8 pF VBEsat VBEsat hFE hFE hFE hFE hFE 650 mV - 60 80 100 60 30 - - - - - - - BSR 17A Kennwerte (Tj = 25/C) Typ. Max. 850 mV 950 mV - - 300 - - - - - DC current gain - Kollektor-Basis-Stromverhaltnis 1) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat 5 dB 65 ns 35 ns 35 ns 240 ns 200 ns 50 ns 420 K/W 2) ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 11 |
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